vs-60epu04hn3, VS-60APU04HN3 www.vishay.com vishay semiconductors revision: 10-jul-15 1 document number: 95794 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast soft recovery diode, 60 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? aec-q101 qualified, meets jesd 201 class 1a whisker test ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? higher frequency operation ? reduced snubbing ? reduced parts count description / applications these diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. ? the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for hf welding, po wer converters and other applications where switching losses are not significant portion of the total losses. ? ? ? product summary package to-247ac modified (2 pins), to-247ac i f(av) 60 a v r 400 v v f at i f 0.87 v t rr typ. see recovery table t j max. 175 c diode variation single die to-247ac modified to-247ac 1 2 3 1 2 3 cathode to base 2 1 3 cathode anode cathode to base 2 anode anode vs-60epu04hn3 VS-60APU04HN3 1 3 available absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 400 v continuous forward current i f(av) t c = 127 c 60 a single pulse forward current i fsm t c = 25 c 600 maximum repetitive forward current i frm square wave, 20 khz 120 operating junction and storage temperatures t j , t stg -55 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 400 - - v forward voltage v f i f = 60 a - 1.05 1.25 i f = 60 a, t j = 175 c - 0.87 1.03 i f = 60 a, t j = 125 c - 0.93 1.10 reverse leakage current i r v r = v r rated - - 50 a t j = 150 c, v r = v r rated - - 2 ma junction capacitance c t v r = 400 v - 50 - pf series inductance l s measured lead to lead 5 mm from package body - 3.5 - nh
vs-60epu04hn3, VS-60APU04HN3 www.vishay.com vishay semiconductors revision: 10-jul-15 2 document number: 95794 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 200 a/s, v r = 30 v - 50 - ns t j = 25 c i f = 60 a ? di f /dt = 200 a/s ? v r = 200 v -85- t j = 125 c - 145 - peak recovery current i rrm t j = 25 c - 8.8 - a t j = 125 c - 15.4 - reverse recovery charge q rr t j = 25 c - 375 - nc t j = 125 c - 1120 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units thermal resistance, ? junction to case r thjc - - 0.70 k/w thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth ? and greased -0.2- weight -5.5- g -0.2-oz. mounting torque 1.2 (10) - 2.4 (20) n m (lbf in) marking device case style to-247a c modified 60epu04h case style to-247ac 60apu04h 1 10 1000 0 2.5 1.5 1 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.5 2 t j = 175 c t j = 125 c t j = 25 c 0.01 0.1 1 10 100 0 200 v r - reverse voltage (v) i r - reverse current (a) t j = 25 c 100 0.001 1000 400 300 t j = 175 c t j = 125 c
vs-60epu04hn3, VS-60APU04HN3 www.vishay.com vishay semiconductors revision: 10-jul-15 3 document number: 95794 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics 100 1000 0 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) 10 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 0204060 allowable case temperature (c) i f(av) - average forward current (a) 140 160 180 see note (1) 120 dc 80 80 100 square wave (d = 0.50) 80 % rated v r applied 100 0 406080100 average power loss (w) i f(av) - average forward current (a) 0 40 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 20 20 60 80 100 rms limit
vs-60epu04hn3, VS-60APU04HN3 www.vishay.com vishay semiconductors revision: 10-jul-15 4 document number: 95794 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r ? ? fig. 9 - reverse recovery waveform and definitions 80 100 1000 t rr (ns) di f /dt (a/s) 140 180 120 160 200 60 100 v r = 400 v t j = 125 c t j = 25 c i f = 120 a i f = 60 a i f = 40 a 100 1000 q rr (nc) di f /dt (a/s) 2500 1500 3500 v r = 400 v t j = 125 c t j = 25 c 0 500 i f = 40 a i f = 60 a i f = 120 a 3000 2000 1000 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-60epu04hn3, VS-60APU04HN3 www.vishay.com vishay semiconductors revision: 10-jul-15 5 document number: 95794 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-60epu04hn3 25 500 antistatic plastic tube VS-60APU04HN3 25 500 antistatic plastic tube links to related documents dimensions to-247ac modified www.vishay.com/doc?95541 to-247ac www.vishay.com/doc?95542 part marking information to-247ac modified-n3 www.vishay.com/doc?95442 to-247ac-n3 www.vishay.com/doc?95007 2 - current rating (60 = 60 a) 4 - package: p = to-247ac (modified) 5 - type of silicon: u = ultrafast recovery 6 - voltage rating (04 = 400 v) - h = aec-q101 qualified 3 - circuit configuration: e = single diode a = single diode, 3 pins device code 5 1 3 2 4 6 7 8 vs- 60 e p u 04 h n3 1 - vishay semiconductors product 7 8 - environmental digit: n3 = halogen-free, rohs-compliant, and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 21-apr-15 1 document number: 95541 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 - 50 mils l/f modified dimensions in millimeters and inches notes (1) dimensioning and tolerance per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c and q symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.35 0.020 0.053 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.17 1.37 0.046 0.054 e1 13.46 - 0.53 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 7.39 - 0.291 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) ? p (datum b) ? p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating 0.10 a c m m ? k b d m m
outline dimensions www.vishay.com vishay semiconductors revision: 21-apr-15 1 document number: 95542 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 - 50 mils l/f dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c and q symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.35 0.020 0.053 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.17 1.37 0.046 0.054 e1 13.46 - 0.53 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 7.39 - 0.291 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) p (datum b) p1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating
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